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? semiconductor components industries, llc, 2015 june, 2015 ? rev. 4 1 publication order number: ngtb75n60fl2w/d NGTB75N60FL2WG igbt this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop (fs) trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. features ? extremely efficient trench with field stop technology ? t jmax = 175 c ? soft fast reverse recovery diode ? optimized for high speed switching ? 5 s short?circuit capability ? these are pb?free devices typical applications ? solar inverters ? uninterruptible power supplies (ups) ? welding absolute maximum ratings rating symbol value unit collector?emitter voltage v ces 600 v collector current @ t c = 25 c @ t c = 100 c i c 100 75 a diode forward current @ t c = 25 c @ t c = 100 c i f 100 75 a diode pulsed current t pulse limited by t j max i fm 200 a pulsed collector current, t pulse limited by t jmax i cm 200 a short?circuit withstand time v ge = 15 v, v ce = 400 v, t j +150 c t sc 5 s gate?emitter voltage v ge 20 v v transient gate?emitter voltage (t pulse = 5 s, d < 0.10) 30 power dissipation @ t c = 25 c @ t c = 100 c p d 595 265 w operating junction temperature range t j ?55 to +175 c storage temperature range t stg ?55 to +175 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. to?247 case 340l style 4 c g 75 a, 600 v v cesat = 1.70 v e off = 1.0 mj e device package shipping ordering information NGTB75N60FL2WG t o?247 (pb?free) 30 units / rail www. onsemi.com a = assembly location y = year ww = work week g = pb?free package marking diagram 75n60fl2 aywwg g e c
NGTB75N60FL2WG www. onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction?to?case, for igbt r jc 0.28 c/w thermal resistance junction?to?case, for diode r jc 0.62 c/w thermal resistance junction?to?ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector?emitter breakdown voltage, gate?emitter short?circuited v ge = 0 v, i c = 500 a v (br)ces 600 ? ? v collector?emitter saturation voltage v ge = 15 v, i c = 75 a v ge = 15 v, i c = 75 a, t j = 175 c v cesat 1.50 ? 1.75 2.30 2.00 ? v gate?emitter threshold voltage v ge = v ce , i c = 350 a v ge(th) 4.5 5.5 6.5 v collector?emitter cut?off current, gate? emitter short?circuited v ge = 0 v, v ce = 600 v v ge = 0 v, v ce = 600 v, t j = 175 c i ces ? ? ? ? 0.1 4.0 ma gate leakage current, collector?emitter short?circuited v ge = 20 v , v ce = 0 v i ges ? ? 200 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 7500 ? pf output capacitance c oes ? 300 ? reverse transfer capacitance c res ? 190 ? gate charge total v ce = 480 v, i c = 75 a, v ge = 15 v q g ? 310 ? nc gate to emitter charge q ge ? 60 ? gate to collector charge q gc ? 150 ? switching characteristic, inductive load turn?on delay time t j = 25 c v cc = 400 v, i c = 75 a r g = 10 v ge = 0 v/ 15 v t d(on) ? 110 ? ns rise time t r ? 48 ? turn?off delay time t d(off) ? 270 ? fall time t f ? 70 ? turn?on switching loss e on ? 2.2 ? mj turn?off switching loss e off ? 1.1 ? total switching loss e ts ? 3.3 ? turn?on delay time t j = 150 c v cc = 400 v, i c = 75 a r g = 10 v ge = 0 v/ 15 v t d(on) ? 100 ? ns rise time t r ? 50 ? turn?off delay time t d(off) ? 280 ? fall time t f ? 100 ? turn?on switching loss e on ? 2.8 ? mj turn?off switching loss e off ? 1.6 ? total switching loss e ts ? 4.4 ? diode characteristic forward voltage v ge = 0 v, i f = 75 a v ge = 0 v, i f = 75 a, t j = 175 c v f 1.70 ? 2.20 2.40 2.90 ? v reverse recovery time t j = 25 c i f = 75 a, v r = 400 v di f /dt = 200 a/ s t rr ? 80 ? ns reverse recovery charge q rr ? 0.40 ? c reverse recovery current i rrm ? 8 ? a reverse recovery time t j = 175 c i f = 75 a, v r = 400 v di f /dt = 200 a/ s t rr ? 143 ? ns reverse recovery charge q rr ? 1.45 ? c reverse recovery current i rrm ? 16 ? a product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
NGTB75N60FL2WG www. onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 8 6 5 4 3 2 1 0 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector?emitter voltage (v) v ge , gate?emitter voltage (v) 10 5 0 figure 5. v ce(sat) vs. t j t j , junction temperature ( c) 175 150 125 100 75 50 25 0 i c , collector current (a) i c , collector current (a) v ce , collector?emitter voltage (v) 7 v ge = 20 v to 13 v t j = 25 c 9 v 8 v 7 v 8 6 5 4 3 2 1 i c , collector current (a) 7 t j = 150 c 9 v 8 v 7 v 8 6 5 4 3 2 1 0 i c , collector current (a) 7 t j = ?55 c 9 v 8 v t j = 25 c t j = 150 c 200 v ge = 20 v to 15 v v ge = 20 v to 13 v 1234 6789 ?75 ?50 ?25 2.50 2.00 1.50 1.00 0.50 0 i c = 75 a i c = 50 a i c = 25 a figure 6. typical capacitance v ce , collector?emitter voltage (v) 90 80 50 40 30 20 10 0 100,000 c, capacitance (pf) 100 c ies c oes c res 70 60 10 v 11 v 10 v 11 v 7 v 10 v 11 v 11 12 13 t j = 25 c 120 120 100 80 60 40 20 0 10,000 1000 100 10 1 100 80 60 40 20 0 0 200 180 160 140 120 100 80 60 40 20 0 200 180 160 140 120 100 80 60 40 20 0 200 180 160 140 140 160 13 v
NGTB75N60FL2WG www. onsemi.com 4 typical characteristics e on figure 7. diode forward characteristics v f , forward voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 70 i f , forward current (a) t j = 25 c t j = 150 c 60 50 40 30 20 10 0 figure 8. typical gate charge q g , gate charge (nc) 150 100 50 0 0 2 4 6 8 12 14 16 v ge , gate?emitter voltage (v) 200 10 v ce = 400 v v ce = 400 v v ge = 15 v i c = 75 a figure 9. switching loss vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 switching loss (mj) 160 v ce = 400 v v ge = 15 v i c = 75 a rg = 10 e off figure 10. switching time vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 100 1000 switching time (ns) 160 v ce = 400 v v ge = 15 v i c = 75 a rg = 10 t r t d(on) figure 11. switching loss vs. i c i c , collector current (a) 45 35 25 15 6 switching loss (mj) v ce = 400 v v ge = 15 v t j = 150 c rg = 10 e off figure 12. switching time vs. i c i c , collector current (a) 100 1000 switching time (ns) v ce = 400 v v ge = 15 v t j = 150 c rg = 10 3.5 4.0 250 e on t f t d(off) 10 t r t d(on) t f t d(off) 55 65 75 85 45 35 25 15 55 65 75 85 10 3.0 300 350 2.5 2.0 1.5 1.0 0.5 0 95 105 5 4 3 2 1 0 95 105
NGTB75N60FL2WG www. onsemi.com 5 typical characteristics e on e off e off figure 13. switching loss vs. rg rg, gate resistor ( ) 45 35 25 15 5 switching loss (mj) v ce = 400 v v ge = 15 v t j = 150 c i c = 75 a 55 65 75 85 figure 14. switching time vs. rg rg, gate resistor ( ) 45 35 25 15 5 switching time (ns) 10,000 55 65 75 85 1000 figure 15. switching loss vs. v ce v ce , collector?emitter voltage (v) 550 500 450 400 350 switching loss (mj) 650 600 v ge = 15 v t j = 150 c i c = 75 a rg = 10 figure 16. switching time vs. v ce v ce , collector?emitter voltage (v) switching time (ns) 1000 100 figure 17. safe operating area v ce , collector?emitter voltage (v) i c , collector current (a) 1000 100 10 1 0.1 1 10 100 1000 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature figure 18. reverse bias safe operating area v ce , collector?emitter voltage (v) i c , collector current (a) 1 10 100 1000 v ge = 15 v, t c = 150 c 1000 100 10 1 e on t r t d(on) t f t d(off) v ce = 400 v v ge = 15 v t j = 150 c i c = 75 a 100 10 v ge = 15 v t j = 150 c i c = 75 a rg = 10 t r t d(on) t f t d(off) 10 14 12 10 8 6 4 2 0 6 5 4 3 2 1 0 300 250 200 150 550 500 450 400 350 650 600 300 250 200 150
NGTB75N60FL2WG www. onsemi.com 6 typical characteristics figure 19. t rr vs. di f /dt (v r = 400 v) di f /dt, diode current slope (a/ ) 700 500 300 100 t rr , reverse recovery time (ns) 150 t j = 25 c, i f = 75 a 900 1100 1300 figure 20. q rr vs. di f /dt (v r = 400 v) di f /dt, diode current slope (a/ ) 700 500 300 100 q rr , reverse recovery charge ( c) 3.0 900 1100 1300 2.0 figure 21. i rm vs. di f /dt (v r = 400 v) di f /dt, diode current slope (a/ ) 500 300 100 i rm , reverse recovery current (a) 50 900 1100 1300 700 figure 22. v f vs. t j t j , junction temperature ( c) 25 0 ?25 ?50 ?75 100 125 150 200 75 v f , forward voltage (v) 3.5 2.5 0.5 0 1.0 130 110 90 70 50 40 30 20 10 0 t j = 175 c, i f = 75 a t j = 25 c, i f = 75 a t j = 175 c, i f = 75 a 1.0 2.5 t j = 25 c, i f = 75 a t j = 175 c, i f = 75 a 50 175 1.5 2.0 3.0 i f = 50 a i f = 25 a i f = 75 a 1.5
NGTB75N60FL2WG www. onsemi.com 7 typical characteristics figure 23. igbt transient thermal impedance on?pulse width (s) 1 0.1 0.01 0.0001 1 square?wave peak r(t) ( c/w) 0.00001 50% duty cycle 20% 10% 5% 2% single pulse r jc = 0.282 junction c 1 c 2 r 1 r 2 duty factor = t 1 /t 2 peak t j = p dm x z jc + t c case c n r n 0.1 0.01 0.001 0.0001 0.001 r i ( c/w) c i (j/ c) 0.0270 0.0037 0.0243 0.0225 0.0554 0.1121 0.0409 0.0130 0.0445 0.0571 0.0892 0.7725 0.000001 figure 24. diode transient thermal impedance on?pulse width (s) square?wave peak r(t) ( c/w) 50% duty cycle 20% 10% 5% 2% single pulse 1 r jc = 0.604 junction case c 1 c 2 r 1 r 2 r n duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n 1 0.1 0.01 0.0001 0.000001 0.00001 0.001 r i ( c/w) c i (j/ c) 0.000156 0.006394 0.1 0.01 0.001 0.007900 0.008527 0.025491 0.022800 0.121738 0.363338 0.001266 0.003708 0.003923 0.013870 0.008214 0.275226
NGTB75N60FL2WG www. onsemi.com 8 figure 25. test circuit for switching characteristics
NGTB75N60FL2WG www. onsemi.com 9 figure 26. definition of turn on waveform
NGTB75N60FL2WG www. onsemi.com 10 figure 27. definition of turn off waveform
NGTB75N60FL2WG www. onsemi.com 11 package dimensions to?247 case 340l?02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ?t? ?b? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ?q? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 4: pin 1. gate 2. collector 3. emitter 4. collector on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ngtb75n60fl2w/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative

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